Infineon IPN60R2K1CE: A High-Performance 600V CoolMOS™ Power Transistor for Efficient Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics demands semiconductor components that excel in performance and reliability. The Infineon IPN60R2K1CE stands out as a premier 600V CoolMOS™ Power Transistor engineered specifically to meet these challenges in a wide array of switching applications.

Built on Infineon’s advanced superjunction (SJ) technology, this transistor is designed to minimize switching losses and conduction losses simultaneously. A key metric, the figure-of-merit (R DS(on) x Q g), is exceptionally low, which is crucial for high-frequency operation. This allows designers to push switching frequencies higher, leading to smaller magnetic components and overall more compact power supply designs without sacrificing efficiency.

The device boasts an ultra-low on-state resistance (R DS(on)) of just 2.1 Ω maximum at room temperature. This directly translates to reduced conduction losses, enabling higher efficiency, especially under high-load conditions. Furthermore, its low gate charge (Q g) ensures swift and controlled switching, which is vital for minimizing crossover losses and improving thermal performance.

Robustness is a cornerstone of the IPN60R2K1CE. It features excellent avalanche ruggedness and high dv/dt capability, making it highly resilient against voltage spikes and harsh switching environments commonly found in applications like switched-mode power supplies (SMPS), power factor correction (PFC) stages, lighting controls, and motor drives. Its integrated ESD protection also enhances its durability during handling and assembly.

The transistor is offered in a compact and versatile DPAK (TO-252) package, which provides a good balance between thermal performance and board space savings. This makes it an ideal choice for space-constrained applications that require high power output.

ICGOOODFIND: The Infineon IPN60R2K1CE is a superior 600V MOSFET that masterfully balances ultra-low losses, high switching speed, and exceptional robustness. It is an optimal component for designers aiming to achieve peak efficiency and maximize power density in their next-generation power conversion systems.

Keywords: CoolMOS™, Switching Losses, Low RDS(on), High Frequency, Superjunction Technology.