Infineon BSZ100N06LS3GATMA1: A Deep Dive into the 30V N-Channel MOSFET

The Infineon BSZ100N06LS3GATMA1 is a surface-mount N-Channel MOSFET engineered for high-performance power management in a compact footprint. As part of Infineon's OptiMOS™ family, this 30V logic-level MOSFET is optimized for applications demanding high efficiency, low power dissipation, and robust thermal performance. This article explores its key specifications, features, and typical application circuits.

Key Features and Electrical Characteristics

The device is built on Infineon's advanced silicon technology, offering an exceptional balance of on-state resistance and gate charge. Its ultra-low typical on-state resistance (RDS(on)) of just 1.0 mΩ at a gate-source voltage (VGS) of 10 V is a standout feature. This low RDS(on) is critical for minimizing conduction losses, which directly translates to higher efficiency and reduced heat generation in power conversion stages.

Furthermore, it is a true logic-level gate drive MOSFET, with a maximum gate-source threshold voltage (VGS(th)) of 1.8 V. This characteristic allows it to be driven directly from 3.3 V or 5 V microcontroller outputs without requiring a specialized gate driver IC, simplifying circuit design and reducing component count and cost.

The BSZ100N06LS3GATMA1 is housed in a SuperSO8 (PG-TSDSON-8) package, which offers an excellent power-to-size ratio. This package features an exposed thermal pad that provides a very low thermal resistance (RthJC = 1.6 °C/W), enabling highly efficient heat dissipation from the die to the PCB. This makes the device capable of handling a continuous drain current (ID) of up to 100 A at a case temperature of 25 °C, making it suitable for high-current applications.

Application Notes and Circuit Considerations

This MOSFET is ideally suited for a wide range of DC-DC conversion and power switching tasks, including:

Synchronous rectification in switched-mode power supplies (SMPS), particularly in buck and boost converter topologies.

Motor control and driving circuits for robotics, drones, and automotive systems.

Load switching and power management units (PMUs) in servers, telecom infrastructure, and consumer electronics.

When designing with this MOSFET, several key points must be considered:

1. Gate Driving: Although it can be driven directly by a microcontroller, a dedicated gate driver is recommended for fast switching transitions to minimize switching losses, especially in high-frequency applications.

2. PCB Layout: To realize the full performance potential, a proper PCB layout is paramount. The exposed pad must be soldered to a large copper pour on the PCB to act as a heatsink. Short and wide traces for the power path (drain and source) are essential to minimize parasitic inductance and resistance.

3. Avalanche and SOA: The device is characterized for its avalanche ruggedness, but designers should always operate within the specified Safe Operating Area (SOA) to ensure long-term reliability.

ICGOOODFIND Summary

The Infineon BSZ100N06LS3GATMA1 is a top-tier 30V N-Channel MOSFET that excels in minimizing power losses and maximizing power density. Its combination of an ultra-low RDS(on), logic-level compatibility, and a thermally efficient package makes it an exceptional choice for designers seeking to push the limits of efficiency and performance in modern power electronics systems.

Keywords:

1. Low RDS(on)

2. Logic-Level

3. Power Efficiency

4. Thermal Performance

5. Synchronous Rectification