Infineon IPT039N15N5: A High-Performance 150V OptiMOS 5 Power Transistor

In the realm of power electronics, achieving higher efficiency, greater power density, and improved reliability is a constant pursuit. The Infineon IPT039N15N5 stands as a prime example of this progress, representing the cutting-edge of MOSFET technology within the renowned 150V OptiMOS™ 5 family. This power transistor is engineered to set new benchmarks in performance for a wide array of demanding applications.

A core highlight of the IPT039N15N5 is its exceptionally low figure-of-merit (R DS(on) Q G). This metric is crucial as it balances conduction losses (dictated by the on-state resistance, R DS(on)) and switching losses (heavily influenced by the gate charge, Q G). With an ultra-low R DS(on) of just 3.9 mΩ maximum, this device minimizes power loss during operation, leading to cooler running systems and higher overall efficiency. This is particularly vital in high-current applications such as synchronous rectification in switch-mode power supplies (SMPS), where every milliohm counts.

Furthermore, the OptiMOS 5 technology platform equips this transistor with superior switching characteristics. The low gate charge allows for faster switching speeds, which enables designers to increase the switching frequency of their systems. This, in turn, permits the use of smaller passive components like inductors and capacitors, significantly increasing the power density of the final design. This makes the IPT039N15N5 an ideal candidate for modern, compact power solutions including industrial motor drives, solar inverters, and telecom infrastructure.

Beyond raw performance, the device is designed for robustness and ease of use. It features a highly avalanche rugged design and an integrated source-drain diode with excellent reverse recovery characteristics, enhancing its reliability in harsh operating conditions. The PQFN 3.3x3.3 mm package offers a low-profile footprint, excellent thermal performance, and is fully RoHS compliant, addressing both environmental and manufacturing concerns.

ICGOODFIND: The Infineon IPT039N15N5 is a top-tier power MOSFET that delivers an outstanding blend of ultra-low conduction loss, fast switching speed, and high robustness. It is a pivotal component for engineers aiming to push the boundaries of efficiency and power density in their next-generation 150V power conversion systems.

Keywords: Ultra-low R DS(on), High Efficiency, OptiMOS 5 Technology, Power Density, Synchronous Rectification.