Infineon IPW60R024CFD7: Redefining High-Efficiency Power Conversion with 600V CoolMOS™ CFD7 Technology
The relentless pursuit of higher efficiency, power density, and reliability in power electronics is driven by innovations in semiconductor technology. At the forefront of this evolution is the Infineon IPW60R024CFD7, a 600V, 24A Superjunction MOSFET from the groundbreaking CoolMOS™ CFD7 family. This power transistor is engineered to set new benchmarks in performance for a wide array of applications, including server and telecom SMPS, industrial motor drives, and solar inverters.
A defining characteristic of the CFD7 series is its exceptional balance between low switching losses and superior ease of use. The IPW60R024CFD7 exemplifies this with an ultra-low typical on-state resistance (RDS(on)) of just 24 mΩ. This minimized conduction loss directly translates into higher efficiency, as less energy is wasted as heat during operation. Furthermore, the device boasts an intrinsically fast body diode with improved reverse recovery characteristics (Qrr), which is crucial for reducing switching losses in hard- and soft-switching topologies like PFC and LLC resonant converters. This combination allows designers to push switching frequencies higher, enabling the use of smaller passive components and ultimately leading to more compact and lighter power systems.
Beyond raw performance metrics, the CoolMOS™ CFD7 technology incorporates advanced robustness and protection features. The device offers enhanced immunity against gate oxide stress, ensuring greater reliability under demanding operating conditions. Its high dv/dt capability and excellent thermal performance make it a robust choice for harsh industrial environments. The TO-247 package provides a proven and reliable interface for efficient thermal management, allowing heat to be effectively transferred to a heatsink.
Designers will also appreciate the simplified driving requirements of the IPW60R024CFD7. Its optimized gate charge (Qg) ensures swift and controlled switching without demanding excessive current from the gate driver circuitry, which simplifies driver design and contributes to overall system cost-effectiveness.
ICGOOODFIND: The Infineon IPW60R024CFD7 is more than just a MOSFET; it is a comprehensive solution for next-generation power conversion. By masterfully combining ultra-low RDS(on), a fast body diode, and inherent robustness, it empowers engineers to create systems that are simultaneously more efficient, more power-dense, and more reliable, solidifying Infineon's leadership in power semiconductor innovation.
Keywords: CoolMOS™ CFD7, High Efficiency, Fast Body Diode, Ultra-Low RDS(on), Power Density.
