Infineon IPB107N20NA: A High-Performance 100V OptiMOS 5 Power MOSFET

In the relentless pursuit of higher efficiency and power density across a wide range of applications, from server power supplies and telecom bricks to industrial motor drives and solar inverters, the choice of power switching device is paramount. The Infineon IPB107N20NA stands out as a premier solution, exemplifying the advanced OptiMOS 5 technology in a robust 100V offering. This power MOSFET is engineered to deliver a superior blend of ultra-low on-state resistance (R DS(on)) and exceptional switching performance, setting a new benchmark for energy-efficient power conversion.

The cornerstone of the IPB107N20NA's performance is its remarkably low R DS(on) of just 1.07 mΩ maximum. This exceptionally low resistance directly translates to minimized conduction losses. When a high current flows through the MOSFET in its on-state, the power dissipated as heat (I²R loss) is drastically reduced. This allows designers to either achieve higher overall system efficiency or to use a smaller heatsink, thereby reducing system size, weight, and cost. The device is housed in an advanced TO-Leadless (TOLL) package, which offers an excellent thermal connection to the PCB. This package's low parasitic inductance is crucial for managing voltage spikes during high-speed switching, further enhancing reliability and performance.

Beyond its static performance, the IPB107N20NA excels in dynamic operation. The OptiMOS 5 technology ensures outstanding figure-of-merit (FOM) characteristics, balancing low gate charge (Q G) and low R DS(on). A lower gate charge means the drive circuit can switch the transistor on and off faster and with less energy, significantly reducing switching losses. This is particularly vital in high-frequency SMPS designs where switching losses can dominate total power loss. The resulting capability to operate at higher frequencies enables the use of smaller passive components like inductors and capacitors, pushing the boundaries of power density.

Furthermore, the device boasts a robust and fast body diode, which is essential for hard-switching topologies like power factor correction (PFC) stages and synchronous rectification. The diode's low reverse recovery charge (Q rr) ensures clean switching and minimizes ringing, reducing electromagnetic interference (EMI) and stress on the MOSFET itself. Combined with a high maximum junction temperature rating, these features make the IPB107N20NA a highly reliable component designed for demanding operational environments.

ICGOOODFIND: The Infineon IPB107N20NA is a top-tier 100V power MOSFET that masterfully combines ultra-low conduction losses with fast switching capabilities. Its advanced TOLL packaging and superior FOM make it an ideal choice for designers aiming to maximize efficiency and power density in next-generation switch-mode power supplies, motor control units, and various industrial power systems.

Keywords:

OptiMOS 5 Technology

Ultra-Low R DS(on)

High-Efficiency Power Conversion

TOLL Package

Fast Switching Performance